Low 1/f noise characteristics of AlGaAs/GaAs heterojunction bipolar transistor with electrically abrupt emitter-base junction

IEEE Electron Device Letters

Volumn 18, Issue 2, 1997, Pages 60-62

  Shin, Jin Hi ^a   Lee, Joonwoo ^a   Chung, Yujin ^a   Ihn, Byoung Uk ^a   Kim, Bumman ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC SPACE CHARGE; NUMERICAL METHODS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR JUNCTIONS; SPURIOUS SIGNAL NOISE;

COLLECTOR CURRENT IDEALITY FACTOR; EPITAXIAL STRUCTURE;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0031076638     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.553044     Document Type: Article

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