Low frequency noise in selfaligned GaInP/GaAs heterojunction bipolar transistor

Electronics Letters

Volumn 28, Issue 25, 1992, Pages 2354-2356

  Plana, R ^a   Graffeuil, J ^a   Delage, S L ^b   Blanck, H ^b   di Forte Poisson, M A ^b   Brylinski, C ^b   Chartier, E ^b  

^a UNIVERSITÉ PAUL SABATIER   (France)

^b THALES   (France)

Author keywords

Bipolar devices; Noise; Transistors

Indexed keywords

HETEROJUNCTIONS; SEMICONDUCTING GALLIUM COMPOUNDS; SPURIOUS SIGNAL NOISE;

GALLIUM ARSENIDE; HBT; LF NOISE;

BIPOLAR TRANSISTORS;

EID: 0027111080     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19921517     Document Type: Article

References (7)

1. HAYAMA, N., LESAGE, S. R., MAHIDIAN, M., and HONJO, K.: ‘A low noise Ku-band AlGaAs/GaAs HBT oscillator’. IEEE MTT-S Dig., 1988, pp. 679-682
2. ALI KHATIBZADEH, M., and BAYRAKTAROGLU, B.: ‘Low phase noise heterojunction bipolar transistor oscillator’, Electron. Lett., 1990, 26, pp. 1246-1247
3. DELAGE, S. L.,: ‘First microwave characterisation of LP-MOCVD grown GalnP/GaAs self-aligned HBT’, Electron. Lett., 1991, 27, pp. 253-254
4. TUTT, M. N., PAVLIDIS, D., PEHLKE, D., PLANA, R., and GRAFFEUIL, J.: ‘1/f noise in AlGaAs/GaAs HBT's using ultrasensitive characterization techniques for identifying noise mechanisms’. 18th GaAs and Related Compounds Symp., Seattle, 1991
5. ESCOTTE, L., PLANA, R., and GRAFFEUIL, J.: ‘Evaluation of noise parameter extraction methods’. To be published in IEEE Trans., 1992, MTT
6. MADIHAN, M., HAYAMA, N., LESAGE, S. R., and HONJO, K.: ‘A low noise microwave oscillator employing a self aligned AlGaAs/GaAs HBT’, IEEE Trans., 1989, MTT-37, pp. 1811-1814
7. VAN DER ZIEL, A., ZHANG, X., and PAWLIKIEWICZ, A. H.: ‘Location of 1/f noise sources in BJT's and HBJT's-I. Theory’, IEEE Trans., 1986, ED-33, pp. 1371-1375