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Volumn 25, Issue 9 R, 1986, Pages 1400-1404

Generation-recombination current in the emitter-base junction of algaas/gaas hbts

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING ALUMINUM COMPOUNDS - APPLICATIONS; SEMICONDUCTING GALLIUM ARSENIDE - APPLICATIONS;

CARRIER DISTRIBUTION; EMITTER-BASE JUNCTION; GENERATION-RECOMBINATION CURRENT;

TRANSISTORS, BIPOLAR;

EID: 0022774039 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.25.1400 Document Type: Article

Times cited : (45)

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