A Low-Noise Microwave Oscillator Employing a Self-Aligned AlGaAs/GaAs HBT

IEEE Transactions on Microwave Theory and Techniques

Volumn 37, Issue 11, 1989, Pages 1811-1814

  Madihian, Mohammad ^a   Hayama, Nobuyuki ^a   Lesage, Steve R ^a,b   Honjo, Kazuhiko ^a  

^a NEC CORPORATION   (Japan)

^b RAYTHEON COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC NETWORKS--EQUIVALENT CIRCUITS; MILLIMETER WAVES; TRANSISTORS, BIPOLAR--HETEROJUNCTIONS;

KU-BAND OSCILLATORS; MICROWAVE HBT OSCILLATORS; PHASE NOISE SPECTRAL DENSITY;

OSCILLATORS, MICROWAVE;

EID: 0024768628     PISSN: 00189480     EISSN: 15579670     Source Type: Journal    
DOI: 10.1109/22.41049     Document Type: Article

References (18)

1. B.T. Debney and J.S. Joshi, “A theory of noise in GaAs FET microwave oscillators and its experimental verification,” IEEE Trans. Electron Devices, vol. ED-30, p. 769, July 1983.
2. A.P.S. Khanna, “Fast-setting, low noise Ku-band fundamental bipolar VCO,” in IEEE MTT-S Int. Microwave Symp. Dig., 1987, p. 579.
3. C.C. Leung, C.P. Snapp, and V. Grande, “A 0.5 μm silicon bipolar transistor for low phase noise oscillator applications up to 20 GHz,” in IEEE MTT-S Int. Microwave Symp. Dig., 1985, p. 383.
4. K. Kurokawa, “Some basic characteristics of broadband negative resistance oscillator circuits,” Bell Syst. Tech. J., p. 1937, July-Aug. 1969.
5. A. der Ziel, “Flicker noise in electronic devices,” Advances Electron. and Electron Phys., vol. 49, p. 225, 1979.
6. R.A. Pucel and J. Curtis, “Near-carrier noise in FET oscillators,” in IEEE MTT-S Int. Microwave Symp. Dig., 1983, p. 282.
7. C. Cu, H. Rohdin, and C. Stolte, “1// noise in GaAs MESFETs,” in IEEE IEDM Dig., 1983, p. 601.
8. A. der Ziel, “Noise in solid state devices,” Advances Electron. and Electron Phys., vol. 46, p. 313, 1978.
9. A.H. Pawlikiewicz and A. der Ziel, “Location of 1/f noise sources in BJT's—II: Experiment,” IEEE Trans. Electron Devices, vol. ED-34, p. 2009, Sept. 1987.
10. B. Hughes, N.G. Fernandez, and J.M. Gladstone, “GaAs FET's with a flicker-noise corner below 1 MHz,” IEEE Trans. Electron Devices, vol. ED-34, p. 733, Apr. 1987.
11. I. Banerjee, P.W. Chye, and P.E. Gregory, “Unusual C-V profiles of Si-implanted (211) GaAs substrates and unusually low-noise MESFETs fabricated on them,” IEEE Electron Device Lett., vol. 9, p. 10, Jan. 1988.
12. N. Hayama, A. Okamoto, M. Madihian, and K. Honjo, “Submicrometer fully self-aligned AlGaAs/GaAs heterojunction bipolar transistor,” IEEE Electron Device Lett., vol. EDL-8, p. 246, May 1987.
13. S.R. LeSage, M. Madihian, N. Hayama, and K. Honjo, “15.6 GHz HBT microstrip oscillator,” Electron Lett., vol. 24, p. 230, 18 Feb. 1988.
14. J. Sone and Y. Takayama, “A 7 GHz common-drain GaAs FET oscillator stabilized with a dielectric resonator,” IECE Japan, vol. MW-77, p. 59, 1977.
15. G. Pataut and D. Pavlidis, “X-band varactor tuned monolithic GaAs FET oscillators,” Int. J. Electron., vol. 64, p. 731, 1988.
16. P.C. Wade, X-band reverse channel GaAs FET power VCO,” Microwave J., p. 92, Apr. 1978.
17. F.N. Sechi and J.E. Brown, “Ku-band FET oscillator,” in IEEE Int. Solid-State Circuits Conf. Dig., 1980, p. 124.
18. M.E. Kim et al., “12–40 GHz low harmonic distortion and phase noise performance of GaAs heterojunction bipolar transistors,” presented at the 1988 IEEE GaAs IC Symp., Nashville, TN, 1988.