Comparison of low frequency noise in GaAs and InP-based HBTs and VCOs

IEEE MTT-S International Microwave Symposium Digest

Volumn 2, Issue , 1995, Pages 689-692

  Cowles, John ^a   Tran, Liem ^a   Block, Tom ^a   Streit, Dwight ^a   Grossman, Chris ^a   Chao, Greg ^a   Oki, Aaron ^a  

^a Electron Syst and Technol Div   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC NETWORK TOPOLOGY; FIELD EFFECT TRANSISTORS; HETEROJUNCTION BIPOLAR TRANSISTORS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SIGNAL NOISE MEASUREMENT; SIGNAL TO NOISE RATIO; VARIABLE FREQUENCY OSCILLATORS;

EPITAXIAL STRUCTURE; LOW FREQUENCY NOISE; NOISE MEASUREMENT SYSTEM; PHASE NOISE; SOLID STATE FREQUENCY SYNTHESIZERS;

SPURIOUS SIGNAL NOISE;

EID: 0029222462     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)