Modeling and measurement of 1/f noise characteristics of silicon BJTs

IEEE MTT-S International Microwave Symposium Digest

Volumn 2, Issue , 1994, Pages 1073-1076

  Costa, Julio C ^a   Ngo, Dave ^a   Jackson, Robert ^a   Lovelace, Dave ^a   Camilleri, Natalino ^a   Jaffee, James ^a  

^a MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC CURRENT COLLECTORS; ELECTRIC NETWORK ANALYSIS; ELECTRIC NETWORK PARAMETERS; EQUIVALENT CIRCUITS; GATES (TRANSISTOR); MATHEMATICAL MODELS; SEMICONDUCTING SILICON; SHOT NOISE; SIGNAL NOISE MEASUREMENT; THERMAL NOISE; VARIABLE FREQUENCY OSCILLATORS;

BASE COLLECTOR JUNCTIONS; BASE EMITTER JUNCTION; BIPOLAR JUNCTION TRANSISTORS; HARMONIC BALANCE SIMULATORS; NOISE CHARACTERISTICS;

BIPOLAR TRANSISTORS;

EID: 0028087574     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)