Transport and Noise in GaAs/AlGaAs Heterojunction Bipolar Transistors—Part II: Noise and Gain at Low Frequencies

IEEE Transactions on Electron Devices

Volumn 36, Issue 6, 1989, Pages 1020-1025

  Jue, Shao Cheng ^a,b   Day, Derek J ^b   Margittai, Agnes ^b   Svilans, Mikelis ^b  

^a SIMON FRASER UNIVERSITY   (Canada)

^b NORTEL NETWORKS   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; TRANSISTORS--NOISE, SPURIOUS SIGNAL;

1/F NOISE; ALUMINUM GALLIUM ARSENIDE; GENERATION-RECOMBINATION NOISE; JOHNSON NOISE;

TRANSISTORS, BIPOLAR;

EID: 0024681609     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.24343     Document Type: Article

References (5)

1. D. J. Day, S. C. Jue, A. Margittai, and P. A. Houston, “Transport and noise in GaAs heterojunction bipolar transistors—Part I: Transport and high current gain,” IEEE Trans. Elecrron Devices, this issue, pp. 1015-1019.
2. B. Hughes, N. G. Ferandez, and J. M. Gladstone, IEEE Trans. Electron Devices, vol. ED-34, pp. 733-741, 1987.
3. D. J. Day, M. Trudeau, S. P. McAlister, and C. M. Hurd, Appl. Phys. Leu., vol. 52, pp. 2034-2036, 1988.
4. A. H. Pawlikiewicz and A. van der Ziel, IEEE Trans. Elecrron Devices, vol. ED-34, pp. 2009-2012, 1987.
5. H. Kroemer, Proc. IEEE, vol. 70, pp. 13-25, 1982.