1/f noise characteristics of AlGaAs/GaAs heterojunction bipolar transistor with a noise corner frequency below 1 kHz

IEEE Electron Device Letters

Volumn 17, Issue 2, 1996, Pages 65-68

  Shin, Jin Ho ^b   Lee, Joonwoo ^b   Suh, Youngseok ^b,c   Kim, Bumman ^a,b  

^a IEEE

^b Pohang University of Science and Technology (POSTECH)   (South Korea)

^c Yeungnam University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR JUNCTIONS; SPURIOUS SIGNAL NOISE;

COLLECTOR CURRENT NOISE SPECTRA; INTERNAL NOISE CORNER FREQUENCY; RESISTANCE FLUCTUATION;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0030082405     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.484125     Document Type: Article

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