Emitter Size Effect on Current Gain in Fully Self-Aligned AlGaAs/GaAs HBT’s with AlGaAs Surface Passivation Layer

IEEE Electron Device Letters

Volumn 11, Issue 9, 1990, Pages 388-390

  Hayama, Nobuyuki ^a   Honjo, Kazuhiko ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE;

ALUMINUM GALLIUM ARSENIDE; EMITTER SIZE EFFECT; PASSIVATION;

TRANSISTORS, BIPOLAR;

EID: 0025495101     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.62965     Document Type: Article

References (10)

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