Low Frequency Noise Characteristics of Self-Aligned AIGaAs/GaAs Power Heterojunction Bipolar Transistors

IEEE Transactions on Electron Devices

Volumn 42, Issue 2, 1995, Pages 219-229

  Tutt, Marcel N ^a   Pavlidis, Dimitris ^a   Khatibzadeh, Ali ^b   Bayraktaroglu, Burhan ^c  

^a UNIVERSITY OF MICHIGAN   (United States)

^b TEXAS INSTRUMENTS   (United States)

^c WESTINGHOUSE ELECTRIC COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ELECTRIC CURRENTS; ELECTRIC NETWORK TOPOLOGY; FREQUENCIES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SPURIOUS SIGNAL NOISE;

COLLECTOR NOISE; GENERATION RECOMBINATION NOISE; SURFACE RECOMBINATION NOISE;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0029250126     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.370076     Document Type: Article

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