Self-consistent calculation of electron density in a two-channel modulation-doped structure

Solid State Electronics

Volumn 33, Issue 1, 1990, Pages 99-104

  Patil, M B ^a   Morkoc H ^a  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONS; SEMICONDUCTOR MATERIALS;

ELECTRON DENSITY; MODULATION-DOPED FIELD-EFFECT TRANSISTORS; POISSON'S EQUATION; SCHRODINGER'S EQUATION; SINGLE-CHANNEL STRUCTURE; TWO-CHANNEL STRUCTURE;

TRANSISTORS, FIELD EFFECT;

EID: 0025066051     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(90)90016-8     Document Type: Article

References (27)

1. High-efficiency millimeter-wave GaAs/GaAlAs power HEMT's
2. Metal-(n) AlGaAs-GaAs two-dimensional electron gas FET
3. Current—Voltage and capacitance—Voltage characteristics of modulation-doped field-effect transistors
4. 1-xAs/GaAs high electron mobility transistors
5. A MODFET dc model with improved pinchoff and saturation characteristics
6. An analytical and computer-aided model of the AlGaAs/GaAs high electron mobility transistor
7. Two-dimensional charge-control model for MODFET's
8. An analytical DC model for the modulation-doped field-effect transistor
9. GaAs, AlAs, and AlxGa1−xAs Material parameters for use in research and device applications
10. Gate capacitance—Voltage characteristic of MODFET's: Its effect on transconductance
11. Quasi-Fermi level bending in MODFET's and its effect on FET transfer characteristics