Influence of High Substrate Doping Levels on the Threshold Voltage and the Mobility of Deep-Submicrometer MOSFET's

IEEE Transactions on Electron Devices

Volumn 39, Issue 4, 1992, Pages 932-938

  van Dort, Maarten J ^a   Woerlee, Pierre H ^a   Walker, Andrew J ^a   Juffermans, Casper A H ^a   Lifka, Herbert ^a  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELD EFFECTS; QUANTUM THEORY; SUBSTRATES;

SUBSTRATE DOPING LEVELS; TRESHOLD VOLTAGE;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0026852922     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.127485     Document Type: Article

References (17)

1. P. K. Chatterjee, W. R. Hunter, T. C. Holloway, and Y. T. Lin, “The impact of scaling laws on the choice of n-channel or p-channel for MOS VLSI,” IEEE Electron Device Lett., vol. EDL-1, pp. 220–223, 1980.
2. A. J. Walker and P. H. Woerlee, “A mobility model for MOSFET's device simulation,” J. Phys. Coll., vol. C4, pp. 265–268, 1988.
3. See for instance, S. M. Sze, Physics of Semiconductor Devices, 2nd ed. New York: Wiley, 1981.
4. C. Y. Wong, J. Y.-C. Sun, Y. Taur, C. S. Oh, R. Angelucci, and B. Davari, “Doping of n+ and p+ polysilicon in a dual-gate CMOS process,” in IEDM Tech. Dig., 1988, pp. 238–241.
5. S. J. Polak, C. den Heyer, W. H. A. Schilders, and P. Markowich, “Semiconductor device modeling from the numerical point of view,” Int. J. Num. Meth. in Eng., vol. 24, pp. 763–838, 1987.
6. F. Stern and W. E. Howard, “Properties of semiconductor surface inversion layers in the electric quantum limit,” Phys. Rev. B, vol. 163, pp. 816–835, 1967.
7. G. Baccarani and M. Wordeman, “Transconductance degradation in thin-oxide MOSFET's,” IEEE Trans. Electron Devices, vol. ED-30, p. 1295, 1983.
8. F. Stern, “Quantum properties of surface space-charge layers,” CRC Crit. Rev. Solid State Sci., pp. 499–514, 1974.
9. J. A. Pals, “A general solution of the quantization in a semiconductor surface inversion layer in the electric quantum limit,” Phys. Lett. A. vol. 39, pp. 101–102, 1972.
10. J. W. Slotboom and H. C. de Graaf, “Measurements of bandgap narrowing in Si bipolar transistors,” Solid-State Electron., vol. 19, pp. 857–862, 1976.
11. Y. Ohkura, “Quantum effects in Si n-MOS inversion layers at high substrate concentration,” Solid-State Electron, vol. 33, pp. 1581–1585, 1990.
12. S. Selberherr, “MOS device modeling at 77 K,” IEEE Trans. Electron Devices, vol. 36, pp. 1464–1474, 1989.
13. S. Selberherr, W. Hansch, M. Seavey, and J. W. Slotboom, “The evolution of the MINIMOS mobility model,” Solid-State Electron., vol. 33, pp. 1425–1436, 1990.
14. A. G. Sabnis and J. T. Clemens, “Characterization of the electron mobility in the inverted <100> Si-surface,” in IEDM Tech. Dig., 1979, pp. 18–21.
15. D. R. Decker and C. N. Dunn, “Temperature dependence of carrier ionization rates and saturated velocities in silicon,” J. Electronic Mat., vol. 4, pp. 527–547, 1975.
16. K. Terada and H. Muta, “A new method to determine effective MOSFET's channel length,” Japan. J. Appl, Phys., vol. 18, pp. 953–959, 1979.
17. W. Hänsch, Th. Vogelsang, R. Kircher, and M. Orlowski, “Carrier transport near the Si/SiO2 interface of a MOSFET's,” Solid-State Electron., vol. 32, pp. 839–849, 1989.