A unified wide temperature range model for the energy gap, the effective carrier mass and intrinsic concentration in silicon

Solid State Electronics

Volumn 36, Issue 10, 1993, Pages 1379-1384

  Vankemmel, R ^a   Schoenmaker, W ^a   De Meyer, K ^a  

^a IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; ELECTRON ENERGY LEVELS; ENERGY GAP; SEMICONDUCTING SILICON; THERMAL EFFECTS;

BAND ENERGY; CARRIER MASS; INTRINSIC CONCENTRATION; TEMPERATURE RANGE MODEL;

SEMICONDUCTOR DEVICE MODELS;

EID: 0027675529     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(93)90046-S     Document Type: Article

References (27)

1. Transport equations in heavy doped silicon