Gate Tunnel Current in an MOS Transistor

IEEE Transactions on Electron Devices

Volumn 37, Issue 4, 1990, Pages 1087-1092

  Majkusiak, Bogdan ^a  

^a WARSAW UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

TRANSISTORS, FIELD EFFECT--TUNNELING;

GATE TUNNEL CURRENT; MOS TRANSISTOR;

SEMICONDUCTOR DEVICES, MOS;

EID: 0025416461     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.52446     Document Type: Article

References (15)

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