On the Universality of Inversion Layer Mobility in Si MOSFET’s: Part II—Effects of Surface Orientation

IEEE Transactions on Electron Devices

Volumn 41, Issue 12, 1994, Pages 2363-2368

  Toriumi, Akira ^b   Iwase, Masao ^b   Tango, Hiroyuki ^b  

^a STANFORD UNIVERSITY   (United States)

^b TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; ELECTRIC NETWORK ANALYSIS; ELECTRON SCATTERING; ELECTRON TRANSPORT PROPERTIES; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES; SUBSTRATES; SURFACE PROPERTIES;

INVERSION LAYER MOBILITY; SURFACE ORIENTATION; SURFACE ROUGHNESS SCATTERING;

MOSFET DEVICES;

EID: 0028742723     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.337450     Document Type: Article

References (18)

1. A. G. Sabnis and J. T. Clemens, in IEDM Tech. Dig., pp. 18–21, 1979.
2. S. C. Sun and J. D. Plummer, IEEE Trans. Electron Devices, vol. ED-27, pp. 1497–1508, 1980.
3. N. D. Arora and G. S. Gildenblat, IEEE Trans. Electron Devices, vol. ED-34, pp. 89–93, 1987.
4. J. T. Watt and J. D. Plummer, in Symp. on VLSI Technol. Tech. Dig., 1987, pp. 81–82.
5. S. Takagi, M. Iwase, and A. Toriumi, in IEDM Tech. Dig., 1988, pp. 398–401.
6. S. Takagi, M. Iwase, and A. Toriumi, in Ext. Abstracts 22nd Conf. Solid State Devices and Materials, 1990, pp. 275–278.
7. C. L. Huang and G. Sh. Gildenblat, IEEE Trans. Electron Devices, vol. 37, pp. 1289–3300, 1990.
8. S. Takagi, A. Toriumi, M. Iwase, and H. Tango, IEEE Trans. Electron Devices, vol. 41, pp. 2357–2362.
9. F. Sten and W. E. Howard, Phys. Rev., vol. 163, pp. 816–835, 1967.
10. T. Ando, A. B. Fowler, and F. Stem, Rev. Mod. Phys., vol. 54, pp. 437–672, 1982.
11. T. Sato, Y. Takeishi, H. Hara, and Y. Okamoto, Phys. Rev. B, vol. B4, pp. 1950–1960, 1971.
12. P. J. Price, Annu. Phys., vol. 133, 1981, pp. 217–239.
13. K. Masaki. C. Hamaguchi, K. Taniguchi, and M. Iwase, Jpn. J. Appl. Phys., vol. 28, pp. 1856–1863. 1989.
14. F. Stem, Phys. Rev. B, vol. B5, pp. 4891–4899, 1972.
15. Y. Matsumoto and Y. Uemura, Jpn. J. Appl. Phys. Suppl. 2, pt. 2, pp. 367–370, 1974.
16. K. Lee, J. S. Choi, S. P. Sim and C. K. Kim, IEEE Trans. Electron Devices, vol. 38. pp. 1905–1912, 1991.
17. D. K. Ferry, in IEDM Tech. Dig., 1984, pp. 605–608.
18. S. M. Goodnick, D. K. Ferry, C. W. Wilmsen, Z. Lilienthal, D. Fathy, and O. L. Krivanek, Phys. Rev. B, vol. B32, pp. 8171–8186, 1985.