Electron mobility in si inversion layers

Japanese Journal of Applied Physics

Volumn 28, Issue 10 R, 1989, Pages 1856-1863

  Masaki, Kazuo ^a   Hamaguchi, Chihiro ^b   Taniguchi, Kenji ^b   Iwase, Masao ^c  

^a ANAN NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

^b OSAKA UNIVERSITY   (Japan)

^c TOSHIBA CORPORATION   (Japan)

Author keywords

Effective normal field dependence; Inversion layer; Mobility; N Si MOSFET

Indexed keywords

SEMICONDUCTING FILMS; SEMICONDUCTOR DEVICES, MOSFET;

ELECTRON MOBILITY; INVERSION LAYERS;

SEMICONDUCTING SILICON;

EID: 0024752608     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.28.1856     Document Type: Article

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