Monte Carlo modeling of electron transport in a Si metal-oxide- semiconductor inversion layer including quantum state and bulk scattering

Journal of Applied Physics

Volumn 70, Issue 3, 1991, Pages 1522-1530

  Imanaga, Syunji ^a   Hayafuji, Yoshinori ^a  

^a SONY CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0008997956     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.349568     Document Type: Article

References (18)