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Volumn 9, Issue 5, 1974, Pages 256-268

Design of Ion-Implanted MOSFET's With Very Small Physical Dimensions

Author keywords

[No Author keywords available]

Indexed keywords

INTEGRATED CIRCUITS, DIGITAL;

EID: 0016116644     PISSN: 00189200     EISSN: 1558173X     Source Type: Journal    
DOI: 10.1109/JSSC.1974.1050511     Document Type: Article
Times cited : (2571)

References (18)
  • 1
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    • Electron-bearn fabrication of ion implanted high-performance FET circuits
    • F. Fang, M. Hatzakis, and C. H. Ting, “Electron-bearn fabrication of ion implanted high-performance FET circuits,” J. Vac. Sci. Technol., vol. 10 p. 1082, 1973.
    • (1973) J. Vac. Sci. Technol. , vol.10 , pp. 1082
    • Fang, F.1    Hatzakis, M.2    Ting, C.H.3
  • 3
    • 85034516947 scopus 로고
    • An experimental high-density memory array fabricated with electron beam
    • Feb.
    • H. N. Yu, R. H. Dennard, T. H. P. Chang, and M. Hatzakis, “An experimental high-density memory array fabricated with electron beam,” in ISSCC Dig. Tech. Papers, Feb. 1973, pp. 9899.
    • (1973) ISSCC Dig. Tech. Papers , pp. 98-99
    • Yu, H.N.1    Dennard, R.H.2    Chang, T.H.P.3    Hatzakis, M.4
  • 5
    • 0002436576 scopus 로고
    • X-Ray lithography—a new high resolution replication process
    • D. L. Spears and H. I. Smith, “X-Ray lithography—a new high resolution replication process” Solid State Technol. vol. 15, p. 21, 1972.
    • (1972) Solid State Technol. , vol.15 , pp. 21
    • Spears, D.L.1    Smith, H.I.2
  • 6
    • 0014756751 scopus 로고
    • Projection masking, thin photoresist layers and interference effects
    • S. Middlehoek, “Projection masking, thin photoresist layers and interference effects” IBM J. Res. Develop., vol. 14, p. 117, 1970.
    • (1970) IBM J. Res. Develop. , vol.14 , pp. 117
    • Middlehoek, S.1
  • 7
    • 6044234792 scopus 로고
    • Design of micron MOS switching devices
    • Electron Devices Meeting, Washington, D.C., Dec.
    • R. H. Dennard, F. H. Gaensslen, L. Kuhn, and H. N. Yu, “Design of micron MOS switching devices” presented at the IEEE Int. Electron Devices Meeting, Washington, D.C., Dec. 1972.
    • (1972) presented at the IEEE Int.
    • Dennard, R.H.1    Gaensslen, F.H.2    Kuhn, L.3    Yu, H.N.4
  • 8
    • 0015770348 scopus 로고
    • Impact of electron beam technology on silicon device fabrication
    • (Electrochem. Soc. Publication), H. R. Huff and R. R. Bur-gess, eds.
    • A. N. Broers and R. H. Dennard, “Impact of electron beam technology on silicon device fabrication,” Semicond. Silicon (Electrochem. Soc. Publication), H. R. Huff and R. R. Bur-gess, eds., pp. 830841 1973.
    • (1973) Semicond. Silicon , pp. 830-841
    • Broers, A.N.1    Dennard, R.H.2
  • 9
    • 0015663099 scopus 로고
    • Design characteristics of n-channel insulated-gate field-effect transistors
    • D. L. Critchlow, R. H. Dennard, and S. E. Schuster, “Design characteristics of n-channel insulated-gate field-effect transistors,” IBM J. Res. Develop. vol. 17, p. 430, 1973.
    • (1973) IBM J. Res. Develop. , vol.17 , pp. 430
    • Critchlow, D.L.1    Dennard, R.H.2    Schuster, S.E.3
  • 10
    • 0015330654 scopus 로고
    • Ion-implanted complementary MOS transistors in low-voltage circuits
    • April
    • R. M. Swanson and J. D. Meindl, “Ion-implanted complementary MOS transistors in low-voltage circuits,” IEEE J. Solid-State Circuits vol. SC-7, pp. 146153 April 1972.
    • (1972) IEEE J. Solid-State Circuits , vol.7 SC , pp. 146-153
    • Swanson, R.M.1    Meindl, J.D.2
  • 11
    • 84946967685 scopus 로고    scopus 로고
    • Device design considerations for ion implanted n-channel MOS-FET's
    • to be published
    • V. L. Rideout, F. H. Gaensslen, and A. LeBlanc, “Device design considerations for ion implanted n-channel MOS-FET's,” IBM J. Res. Develop. to be published.
    • IBM J. Res. Develop.
    • Rideout, V.L.1    Gaensslen, F.H.2    LeBlanc, A.3
  • 12
    • 36049059178 scopus 로고
    • Transport properties of electrons in inverted Si surfaces
    • F. F. Fang and A. B. Fowler, “Transport properties of electrons in inverted Si surfaces” Phys. Rev. vol. 169, p. 619, 1968.
    • (1968) Phys. Rev. , vol.169 , pp. 619
    • Fang, F.F.1    Fowler, A.B.2
  • 14
    • 0015768002 scopus 로고
    • An analysis of the threshold voltage for short channel IGFET's
    • H. S. Lee, “An analysis of the threshold voltage for short channel IGFET's,” Solid-State Electron., vol. 16, p. 1407, 1973.
    • (1973) Solid-State Electron. , vol.16 , pp. 1407
    • Lee, H.S.1
  • 15
    • 84910706415 scopus 로고
    • Steady state mathematical theory for the insulated gate field effect transistor
    • D. P. Kennedy and P. C. Murley, “Steady state mathematical theory for the insulated gate field effect transistor,” IBM J. Res. Develop., vol. 17, p. 1, 1973.
    • (1973) IBM J. Res. Develop. , vol.17 , pp. 1
    • Kennedy, D.P.1    Murley, P.C.2
  • 16
    • 0015626349 scopus 로고
    • A two-dimensional mathematical model of the insulated-gate field-effect transistor
    • M. S. Mock, “A two-dimensional mathematical model of the insulated-gate field-effect transistor,” Solid-State Electron., vol.16, p. 601, 1973.
    • (1973) Solid-State Electron. , vol.16 , pp. 601
    • Mock, M.S.1
  • 18
    • 0016049539 scopus 로고
    • Subthreshold design considerations for insulated gate field-effect transistors
    • April
    • R. R. Troutman, “Subthreshold design considerations for insulated gate field-effect transistors,” IEEE J. Solid-State Circuits, vol. SC-9 p. 55, April 1974.
    • (1974) IEEE J. Solid-State Circuits , vol.9 SC , pp. 55
    • Troutman, R.R.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.