Quantum properties of surface space-charge layerss

C R C Critical Reviews in Solid State Sciences

Volumn 4, Issue 1-4, 1973, Pages 499-514

  Stem, Frank ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84954698077     PISSN: 0011085X     EISSN: None     Source Type: Journal    
DOI: 10.1080/10408437308245840     Document Type: Article

References (95)

1. A recent review has been given by Dorda, G., in FestkorperproblemeI Advances in Solid State Physics. Vol. XIII, Queisser, H. J., Ed., Pergamon, Oxford, 1973, 215.
2. Many, A., Goldstein, Y., and Grover, N. B., Semiconductor Surfaces, North-Holland, Amsterdam, 1965.
3. Frankl, D. R., Electrical Properties of Semiconductor Surfaces, Pergamon, New York, 1967; CRC Crit. Rev. Solid State Sci, 4(3), 455, 1974.
4. Greene, R. F., in Solid State Surface Science, Vol. 1, Green, M., Ed., Marcel Dekker, New York, 1969, 87; CRC Crit. Rev. Solid State Set, 4(3), 477, 1974.
5. Pierret, R. F. and Sah, C. T., Solid-State Electronics, 11,279,1968.
6. Stem, F. and Howard, W. E.,Phys. Rev., 163, 816, 1967.
7. Hensel, J. C., Hasegawa, H., and Nakayama, M., Phys. Rev., 138, A225, 1965.
8. Pals, J. A., Phys. Rev., B7, 754, 1973; 5, 4208, 1972.
9. Stern, F.,Phys. Rev., B5.4891, 1972.
10. Laur, J. and Jayadevaiah, T. S., Solid-State Electronics, 16, 644, 1973.
11. See, for example, Handbook of Mathematical Functions, Abramowitz, M. and Stegun, I. A., U.S. Govt. Printing Office, Washington, 1964, chap. 10.
12. Fang, F. F. and Howard, W. E., Phys. Rev. Lett., 16, 797, 1966.
13. Fang, F. F. and Fowler, A. B., Phys. Rev., 169, 619, 1968.
14. Ezawa, H., Kawaji, S., Kuroda, T., and Nakamura, K., Surface ScL, 24, 659, 1971.
15. See also Prange, R. E.,Phys. Rev., 187, 804, 1969 for the related case of magnetic-field-induced surface subbands in metals.
16. Ezawa, Kawajii, S., Kuroda, T., and Nakamura, K., Surface Sci, 24, 659, 1971.
17. Ezawa, H., Ann Phys. (N.Y.), 67, 438, 1971.
18. Takahashi, T., M.Sc. thesis, Gakushuin University, Tokyo, 1971.
19. Ezawa, H., Kawaji, S., and Nakamura, K., Jap. J. Appl. Phys., 13, 126, 1974; see also Surface Sci., 27, 218, 1971.
20. Sah, C. T., Ning, T. H., and Tschopp, L. L., Surface Sci., 32, 561, 1972.
21. Siggia, E. D. and Kwok, P. C.,Phys. Rev., B2, 1024, 1970.
22. Cheng, Y. C.,J. Appl. Phys., 44, 2425, 1973.
23. Berz, F., Solid-State Electronics, 13, 903, 1970.
24. Kawaji, S, and Kawaguchi, Y.,J. Phys. Soc. Jap., Suppl. 21, 336, 1966.
25. Rutledge, J. L. and Armstrong, W. E., Solid-State Electronics, 15, 215, 1972.
26. Arnold, E. and Abowitz, G. A., Appl. Phys Lett., 9, 344, 1966.
27. Cheng, Y. C. and Sullivan, E. A.,J Appl. Phys., 44,923, 1973; 44, 3619, 1973.
28. Fowler, A. B., unpublished data.
29. Oakley, R. E. and Pepper, M., Phys. Lett., 41A, 87, 1972.
30. Miyazaki, T., Yoshida, I., Katayama, Y., and Kotera, N.,J. Jap. Soc. Appl. Phys., Suppl. 40, 199, 1971.
31. Ning, T. H. and Sah, C.T., Phys. Rev., B6.4605, 1972.
32. Ziman, J., Electrons and Phonons, Oxford University Press, London, 1960, 456.
33. Prange, R. E. and Nee, T. W., Phys. Rev., 168, 779, 1968.
34. Greene, R. F., in Molecular Processes on Solid Surfaces, Drauglis, E., Gretz, R. D., and Jaffee, R. J., Eds., McGraw-Hill, New York, 1969, 239.
35. Mertsching, J. and Fischbeck, H. J., Phys Status Solidi, 41, 45, 1970.
36. Cheng, Y. C. and Sullivan, E. A., Surface Set, 34, 717, 1973; Cheng, Y. C., J. Jap. Soc. Appl. Phys., Suppl. 41, 173, 1972.
37. Sah, C. T., Bull. Am. Phys Soc., 18, 344, 1973; unpublished report.
38. Campisi, G. J., Ph.D. thesis, Pennsylvania State University, University Park, 1973.
39. Neumark, G. F.,Phys. Rev. Lett., 21, 1252, l96S;Phys. Rev., Bl, 2613, 1970.
40. Duke, C. B. and Swenberg, C. E., Proc. Ninth Int. Conf. Phys Semiconductors, Moscow, 1968, Vol. 2, Publishing House Nauka, Leningrad, 1968, 745. See also Alferieff, M. E. and Duke, C. B., Phys. Rev., 168, 832, 1968.
41. Brews, J. K.,J. Appl. Phys., 43, 2306, 1972.
42. Thompson, W. A., Penney, T., Kirkpatrick, S., and Holtzberg, F., Phys. Rev. Lett., 29, 779, 1972.
43. The concept;of a mobility edge in inversion layers has occurred to several people, including Mott, N. F., Electronics Power, 19, 321, 1973. See also M. Tobey, Ph.D. thesis, Princeton University, Princeton, 1973.
44. Chen, J. T. and Muller, R. S., unpublished data.
45. Dorda, G.,Appl. Phys. Lett., 17, 406, 1970; J. Appl. Phys. 42, 2053, 1971.
46. Dorda, G., Eisele, I., and Preuss, E., Solid State Commun., 11, 1625, 1972.
47. Gaydon, B. G., Solid-State Electronics, 16, 147, 1973.
48. Dorda, G. and Eisele, I., Phys. Status Solidi, (1), 20, 263, 1973.
49. Ito, R., J. Appl. Phys., 43, 735, 1972.
50. Colman, D., Bate, R. T., and Mize, J. P.,J. Appl. Phys., 39,1923, 1968.
51. Dorda, G., Friedrich, H., and Preuss, E., J. Vac. Sci. Technol, 9, 759, 1972.
52. Duke, C. B., Phys. Lett., 24A, 461, 1967; Phys. Rev., 159,632,1968.
53. Katayama, Y., Kotera, N., and Komatsubara, K. F., Proc. Tenth Int. Conf. Phys. Semiconductors, Cambridge, Mass., 1970, USAEC, Oak Ridge, 1970, 464.
54. Wheeler, R. G. and Ralston, R. W., Phys. Rev. Lett., 27, 925, 1971.
55. Stern, F.,Phys. Rev. Lett., 30, 278, 1973.
56. Edwards, J. R., Ph.D. thesis, University of Illinois, Urbana, 1969; Sah, C. T., Edwards, J. R., and Ning, T. H., Phys. Status Solidi, alO, 153, 1972.
57. Sato, T., Takeishi, Y., Hara, H., and Okamoto, Y., Phys. Rev., B4, 1950, 1971; Sato, T., Takeishi, Y., and Hara, H., Jap. J. Appl. Phys., 8, 558, 1969.
58. Sakaki, H. and Sugano, T.,J. Jap. Soc. Appl. Phys., Suppl. 41, 141, 1972.
59. Ohwada, A., Maeda, H., and Tanaka, K., Jap. J. Appl. Phys., 8, 629, 1969.
60. Takeishi, Y., Sato, T., Maeda, H., and Hirabayashi, K., J. Vac. Sci. Technol., 9, 769, 1972.
61. Abowitz, G., Arnold, E., and Ladell, J., Phys. Rev. Lett., 18, 543, 1967.
62. Fang, F. F. and Fowler, A. B.,7. Appl. Phys., 41, 1825, 1970.
63. Sato, T., Takeishi, Y., Tango, H., Ohnuma, N., and Okamoto, Y., J. Phys. Soc. Jap., 31, 1846, 1971.
64. Krowrie, C. and Holm-Kennedy, J., personal communication.
65. Yamada, E., Proc. 1973 Int. Conf. Solid State Devices (Tokyo), to be published.
66. Sakaki, H. and Sugano, T., Proc. 1973 Int. Conf. Solid State Devices (Tokyo), to be published.
67. Katayama, Y., Yoshida, I., Kotera, N., and Komatsubara, K. F.,Appl. Phys. Lett., 20, 31, 1972.
68. Appelbaum, J. A. and Baraff, G. A., Phys. Rev. B, 4, 1235, 1971.
69. Ando, T., Matsumoto, Y., and Uemura, Y., Proc. 11th Int. Conf. Phys. Semiconductors, Warsaw, 1972, Vol. 1, Polish Scientific Publishers, Warsaw, 1972, 294.
70. Ohta, K.,Jap. J. Appl. Phys., 10, 850, 1971;J. Phys. Soc. Jap., 31, 1627, 1971.
71. Fowler, A. B., Fang, F. F., Howard, W. E., and Stiles, P. J., Phys. Rev. Lett., 16, 901, 1966; J. Phys. Soc. Jap., Suppl. 21,331,1966.
72. Ando, T., Matsumoto, Y., Uemura, Y., Kobayashi, M., and Komatsubara, K. F.,7. Phys. Soc. Jap., 32, 859, 1972.
73. Kaplit, M. and Zemel, J. N., Phys. Rev. Lett., 21, 212, 1968.
74. Voshchenkov, A., Ph.D. thesis, University of Pennsylvania, Philadelphia, 1972.
75. Sakaki, H. and Sugano, T.,Jap. J. Appl. Phys., 10, 1016, 1971.
76. Fang, F. F. and Stiles, P. J., Phys. Rev., 174, 823,1968.
77. Janak, J. F., Phys. Rev., 178,1416,1969.
78. Narita, K., Takaoka, S., and Komatsubara, K. F., Solid State Commun., 12, 1221, 1973.
79. Kobayashi, M. and Komatsubara, K. F., Solid State Commun, 13, 293, 1973.
80. Lakhani, A. A. and Stiles, P. J., Phys. Rev. Lett., 31, 25,1973.
81. Smith, J. L. and Stiles, P. J., Phys. Rev. Lett., 29,102, 1972.
82. Stern, F.,Phys. Rev. Lett., 21, 1687, 1968.
83. Tsui, D. C., Solid State Commun., 9, 1789,1971.
84. Tansal, S., Fowler, A. B., and Cotellessa, R. F., Phys. Rev., 178, 1326, 1969; Tansal, S., Ph.D. thesis, New York University, New York, 1969.
85. Uemura, Y. and Matsumoto, Y.,J. Jap. Soc. Appl Phys., Suppl. 40, 205, 1971.
86. Kawaji, S. and Gatos, H. C., Surface Set, 7, 215, 1967.
87. Kotera, N., Katayama, Y., and Komatsubara, K. F., Phys. Rev. B, 5, 3065, 1972.
88. Tsui, D. C., Phys. Rev. Lett., 24, 303, 1970; Phys. Rev. 5,4,4438, 1971; Proc. Tenth Int. Conf. Phys. Semiconductors, Cambridge, Mass., 1972, USAEC, Oak Ridge, 1972, 46S;Phys. Rev. B, 8, 2657, 1973.
89. Baraff, G. A. and Appelbaum, J. A., Phys. Rev, B, 5, 475, 1972.
90. von Klitzing, K. and Landwehr, G., Solid State Commun., 9, 2201, 1971.
91. Bouat, J. and Thuillier, J. C., Proc. 1973 Int. Conf. Solid State Devices, to be published.
92. Antcliffe, G. A., Bate, R. T., and Reynolds, R. A., Physics of Semimetals and Narrow Gap Semiconductors, Carter, D. L. and Bate, R. T., Eds., Pergamon, Oxford, 1971, 499.
93. Tasch, A. F., Jr., Buss, D. D., Bate, R. T., and Breazeale, B. H., Proc. Tenth Int. Conf. Phys. Semiconductors, Cambridge, Mass. 1970, USAEC, Oak Ridge, 1970, 458.
94. Many, A., CRC Crit. Rev. Solid State Sci, 4(3), 1974.
95. Appelbaum, J. A. and Baraff, G. A., Phys. Rev. Lett., 26, 1432, 1971.