A model for the quantized accumulation layer in metal-insulator-semiconductor structures

Solid State Electronics

Volumn 38, Issue 1, 1995, Pages 203-210

  Lopez Villanueva J A ^a   Melchor, I ^a   Gamiz F ^a   Banqueri, J ^a   Jimenez Tejada J A ^a  

^a UNIVERSITY OF GRANADA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CAPACITANCE; CARRIER CONCENTRATION; ELECTRIC FIELDS; ELECTRON ENERGY LEVELS; ELECTRONS; ITERATIVE METHODS; MATHEMATICAL MODELS; NUMERICAL ANALYSIS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING;

BOLTZMANN CONSTANT; CAPACITANCE CURVES; CONDUCTION BAND MINIMUM; FERMY ENERGY LEVEL; HOLE DENSITY; ISO ENERGETIC ELLIPSOIDS; METAL INSULATOR SEMICONDUCTOR STRUCTURES; QUANTIZED ACCUMULATION LAYER; QUANTUM EFFECTS; TWO DIMENSIONAL ELECTRON GAS;

MOS DEVICES;

EID: 0029219984     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(94)E0033-B     Document Type: Article

References (14)

1. Exact resolution of coupled Schrödinger–Poisson equation: application to accurate determination of potential profile in HEMTs
2. Self-consistent solution of the Poisson and Schrödinger equations in accumulated semiconductor-insulator interfaces
3. Quantum-mechanical modeling of accumulation layers in MOS structure