Physical Understanding of Low-Field Carrier Mobility in Silicon MOSFET Inversion Layer

IEEE Transactions on Electron Devices

Volumn 38, Issue 8, 1991, Pages 1905-1912

  Sim, Sang Pil ^c   Kim, Choong Ki ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Hynix Semiconductor Inc   (South Korea)

^c SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONS; PHONONS; SEMICONDUCTOR DEVICES, MOSFET;

CARRIER MOBILITY; ELECTRON GASES;

SEMICONDUCTING SILICON;

EID: 0026205305     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.119032     Document Type: Article

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