The Influence of Quantization on the Space‐Charge Layer Capacitance of Si in Strong Accumulation

physica status solidi (b)

Volumn 136, Issue 1, 1986, Pages 241-249

  Frantsuzov, A A ^a   Okhonin, S A ^a   Pogosov, A G ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICES, MOS;

CAPACITANCE-VOLTAGE CHARACTERISTICS; QUANTIZATION; SPACE-CHARGE LAYER CAPACITANCE;

SEMICONDUCTING SILICON;

EID: 0022756034     PISSN: 03701972     EISSN: 15213951     Source Type: Journal    
DOI: 10.1002/pssb.2221360127     Document Type: Article

References (14)

1. Hartree Approximation for the Electronic Structure of ap-Channel Inversion Layer of Silicon M. O. S.