Low-frequency noise properties of selectively dry etched InP HEMT's

IEEE Transactions on Electron Devices

Volumn 45, Issue 6, 1998, Pages 1219-1225

  Duran, Halit C ^a,b   Ren, Lin ^a   Beck, Mattias ^a   Py, Marcel A ^a   Ilegems, Marc ^a   Bächtold, Werner ^a  

^a ETH ZURICH   (Switzerland)

^b EPFL   (Switzerland)

Author keywords

Etching; Indium materials devices; Modfet's; Noise; Plasma materials processing applications

Indexed keywords

TRAP DENSITY REDUCTION;

DRY ETCHING; GATES (TRANSISTOR); PASSIVATION; SCHOTTKY BARRIER DIODES; SEMICONDUCTING INDIUM PHOSPHIDE; SPURIOUS SIGNAL NOISE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0032094850     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.678520     Document Type: Article

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