Characterization of electron traps in plasma-treated AllnAs

Journal of Electronic Materials

Volumn 25, Issue 5, 1996, Pages 733-737

  Sugino, T ^a   Hirata, D ^a   Yamamura, I ^a   Matsuda, K ^a,b   Shirafuji, J ^a  

^a OSAKA UNIVERSITY   (Japan)

^b HORIBA LTD   (Japan)

Author keywords

AlInAs; Ar plasma; Electron trap; Isothermal capacitance transient spectroscopy; O2 plasma; Schottky junction

Indexed keywords

EID: 0041725940     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/bf02666532     Document Type: Article

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