Deep level analysis of Si doped MBE grown AllnAs layers

LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels - 4th International Conference on Indium Phosphide and Related Materials, IPRM 1992

Volumn , Issue , 1992, Pages 136-139

  Hoenow, H ^a   Bach, H G ^a   Bottcher J ^a   Gueissaz, F ^b   Kunzel H ^a   Scheffer, F ^c   Schramm, C ^d  

^a FRAUNHOFER HEINRICH HERTZ INSTITUTE   (Germany)

^b HUMBOLDT UNIVERSITY   (Germany)

^c EPFL   (Switzerland)

^d UNIVERSITY OF DUISBURG ESSEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; DEEP LEVEL TRANSIENT SPECTROSCOPY; GROWTH TEMPERATURE; III-V SEMICONDUCTORS; INDIUM PHOSPHIDE; INTEGRATED OPTOELECTRONICS; MOLECULAR BEAM EPITAXY; ORGANOMETALLICS; PIXELS; SEMICONDUCTING INDIUM PHOSPHIDE; SILICON;

CAPACITANCE VOLTAGE; CURRENT VOLTAGE; LATTICE-MATCHED; MBE GROWTH; METAL-ORGANIC VAPOR PHASE EPITAXY; SCHOTTKY CONTACTS; TRAP CONCENTRATION;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 84975445130     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICIPRM.1992.235658     Document Type: Conference Paper

References (10)

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