Gate Current 1/f Noise in GaAs MESFET’s

IEEE Transactions on Electron Devices

Volumn 35, Issue 7, 1988, Pages 1071-1075

  Vandamme, Lode K J ^a   Rigaud, Dominique ^b   Peransin, Jean Marie ^b   Alabedra, Robert ^b   Dumas, Jean Michel ^c  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b UNIV MONTPELLIER   (France)

^c ORANGE LABS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICES, SCHOTTKY BARRIER - MATHEMATICAL MODELS; TRANSISTORS, FIELD EFFECT - JUNCTIONS;

DRAIN CURRENT NOISE; GATE CURRENT 1/F NOISE; METAL SEMICONDUCTOR FET (MESFET);

SEMICONDUCTOR DEVICES, FIELD EFFECT;

EID: 0024053898     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.3366     Document Type: Article

References (9)

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2. D. Sodini, M. Savelli, G. Lecoy, and D. Rigaud, “Noise in MESFET’s in the range of 1–100 MHz,” in Proc. 5th Int. Conf. Noise (Bad Nauheim, Germany, Mar. 1978)
3. also in Noise in Physical Systems, D. Wolf, Ed. Berlin: Springer, 1978, pp. 34–37.
4. D. Coulman, N. Newman, G. A. Reid, Z. Liliental-Weber, E. R. Weber, and W. E. Spicer, “A chemical and structural investigation on Schottky and ohmic Au/GaAs contacts,” J. Vac. Sci. Technol., vol. A5, pp. 1521–1525, July/Aug. 1987.
5. F. N. Hooge, T. G. M. Kleinpenning, and L. K. J. Vandamme, “Experimental studies on 1/f noise,” Rep. Prog. Phys., vol. 44, pp. 479–532, 1981.
6. L. K. J. Vandamme, “Is the 1/f noise parameter a a constant,” in Proc. 7th Int. Conf. Noise (Montpellier, France. May 1983)
7. also in Noise in Physical Systems, M. Savelli et al, Eds. New York: North Holland, 1983, pp. 183–192.
8. —, “On the calculation of 1/f noise of contacts,” Appl. Phys., vol. 11, pp. 89–96, 1976.
9. L. K. J. Vandamme and W. M. G. van Bokhoven, “Conductance noise investigations with four arbitarily shaped and placed electrodes,” Appl. Phys., vol. 14, pp. 205–215, 1977.