InAlAs/InGaAs/InP MODFET's with Uniform Threshold Voltage Obtained by Selective Wet Gate Recess

IEEE Electron Device Letters

Volumn 13, Issue 10, 1992, Pages 525-527

  Tong, M ^a   Nummila, K ^a   Ketterson, Andrew ^a   Adesida, Ilesanmi ^a   Caneau, C ^b   Bhat, Rajaram ^b  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^b TELCORDIA TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FIELD EFFECT TRANSISTORS; HETEROJUNCTIONS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE;

CURRENT-GAIN CUTOFF FREQUENCY; MODFET DEVICES; SELECTIVE WET GATE RECESS; THRESHOLD VOLTAGE; TRANSCONDUCTANCE UNIFORMITY;

ETCHING;

EID: 0026940016     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.192822     Document Type: Article

References (11)

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