Structural and electronic effects of argon sputtering and reactive ion etching on In0.53Ga0.47As and In0.52Al0.48As studied by inelastic light scattering

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 13, Issue 3, 1995, Pages 988-994

  Maslar, J E ^a   Dorsten, J F ^a   Bohn, P W ^a   Agarwala, S ^a   Adesida, I ^a   Caneau, C ^a   Bhat, R ^a  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ARGON; CARRIER CONCENTRATION; DOPING (ADDITIVES); ELECTRIC PROPERTIES; PASSIVATION; PHONONS; RAMAN SPECTROSCOPY; REACTIVE ION ETCHING; SCATTERING; SPUTTERING; STRUCTURE (COMPOSITION);

ARGON SPUTTERING; ELECTRICAL MODIFICATION; INDIUM ALUMINUM ARSENIDE; INDIUM GALLIUM ARSENIDE; INELASTIC LIGHT SCATTERING; STRUCTURAL MODIFICATION;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0029307206     PISSN: 0734211X     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.588217     Document Type: Article

References (39)