Reactive ion etch-induced effects on 0.2 μm T-gate In0.52Al0.48As/In0.53Ga0.47As/InP high electron mobility transistors

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 14, Issue 6, 1996, Pages 3679-3683

  Cheung, R ^a   Patrick, W ^a   Pfund, I ^a   Hahner G ^a  

^a ETH ZURICH   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0039487734     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.588749     Document Type: Article

References (9)

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