Semiconductor Impurity Analysis from Low-Frequency Noise Spectra

IEEE Transactions on Electron Devices

Volumn 18, Issue 1, 1971, Pages 50-53

  Copeland, John A ^a  

^a LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84941521502     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1971.17142     Document Type: Article

References (10)

1. W. Shockley, “Electrons, holes, and traps,” Proc. IRE. vol. 46, pp. 973–990, June 1958.
2. J. A. Copeland, “Switching and low-field breakdown in n-GaAs bulk diodes,” Appl. Phys. Lett., vol. 9, pp. 140–142, August 15, 1966.
3. H. W. Thim and S. Knight. “Carrier generation and switching phenomena in n-GaAs devices,” Appl. Phys. Lett., vol. 11, pp. 83–85, August 1, 1967
4. J. A. Copeland and W. C. Niehaus, “Traps and low-field breakdown in n-GaAs devices.” to be published.
5. H. J. Queisser and C. S. Fuller, “Photoluminescence of Cu-doped gallium arsenide,” J. Appl. Phys., vol. 37, pp. 4895–4899, December 1966
6. G. E. Moore, private communication.
7. A. van der Ziel, Fluctuation Phenomena in Semiconductors. London: Butterworth, 1959, pp. 22-45
8. K. M. Van VIiet and J. R. Fassett, in Fluctuation. Phenomena in Solids, R. E. Burgess, Ed, New York: Academic Press. 1965.ch, VII.
9. J. Blakemore, Semiconductor Statistics, New York: Pergamon, 1962, pp, 75–81, 118–119.
10. J. Blanc, R. H. Bube, and L. R. Weisberg, “Behavior of lattice defects in GaAs,” J. Phys. Chem. Solids, vol. 25, pp. 225–244 1964.