Deep levels induced by SiCl4 reactive ion etching in GaAs

Materials Research Society Symposium Proceedings

Volumn 325, Issue , 1994, Pages 443-448

  Johnson, N P ^a   Foad, M A ^a   Murad, S ^a   Holland, M C ^a   Wilkinson, C D W ^a  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CHLORINE COMPOUNDS; CRYSTAL DEFECTS; ELECTRON ENERGY LEVELS; ETCHING; MOLECULAR BEAM EPITAXY; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SUBSTRATES;

DEEL LEVELS; DEEP LEVEL TRANSIENT SPECTROSCOPY; SILICON CHLORIDE REACTIVE ION ETCHING;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0028288105     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (17)