Evidence for screening effects on the 1/f current noise in GaAs/AIGaAs modulation doped field effect transistors

Journal of Applied Physics

Volumn 80, Issue 3, 1996, Pages 1583-1593

  Py, M A ^a   Buehlmann, H J ^a  

^a EPFL   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000741168     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.362955     Document Type: Article

References (34)

1. H. J. Siweris and B. Schiek, IEEE Trans. Microwave Theory Techn. MTT-33, 233 (1985).
2. R. Plana, L. Escotte, O. Llopis, H. Amine, T. Parra, M. Gayral, and J. Graffeuil, IEEE Trans. Electron Devices ED-40, 852 (1993).
3. F. N. Hooge, Phys. Lett. 29A, 139 (1969).
4. F. N. Hooge, Physica 83B, 14 (1976).
5. F. N. Hooge, T. G. M. Kleinpenning, and L. K. J. Vandamme, Rep. Prog. Phys. 44, 479 (1981).
6. L. K. J. Vandamme, Solid-State Electron. 23, 317 (1980).
7. D. Delagebeaudeuf and N. T. Linh, IEEE Trans. Electron Devices ED-29, 955 (1982).
8. T. J. Drummond, H. Morkoç, K. Lee, and M. Shur, IEEE Electron Device Lett. EDL-3, 338 (1982).
9. K. Lee, M. S. Shur, T. J. Drummond, and H. Morkoç, IEEE Trans. Electron Devices ED-30, 207 (1983).
10. K. Lee, M. S. Shur, T. J. Drummond, and H. Morkoç, J. Appl. Phys. 54, 2093 (1983).
11. D. Delagebeaudeuf, P. Delescluse, M. Laviron, P. N. Tung, J. Chaplart, J. Chevrier, and N. T. Linh, Inst. Phys. Conf. Ser. 65, 393 (1983).
12. D. C. Tsui, A. C. Gossard, G. Kaminsky, and W. Wiegmann, Appl. Phys. Lett. 39, 712 (1981).
13. R. H. Wallis, Physica 117&118B, 756 (1983).
14. K. Hirakawa and H. Sakaki, Phys. Rev. B 33, 8291 (1986).
15. T. Ando, J. Phys. Soc. Jpn. 51, 3900 (1982).
16. W. Walukiewicz, H. E. Ruda, J. Lagowski, and H. C. Gatos, Phys. Rev. B 30, 4571 (1984).
17. A. L. Efros, F. G. Pilkus, and G. G. Samsonidze, Phys. Rev. B 12, 8295 (1990).
18. M. A. Py, Y. Haddab, Z. M. Shi, H.-J. Bühlmann, M. V. Baeta Moreira, and M. Ilegems, Microelectron. Eng. 15, 577 (1991).
19. M. A. Py, Y. Haddab, Z. M. Shi, H.-J. Bühlmann, M. V. Baeta Moreira, and M. Ilegems, Braz. J. Phys. 24, 491 (1994).
20. J. M. Peransin, P. Vignaud, D. Rigaud and L. K. J. Vandamme, IEEE Trans. Electron Devices ED-37, 2250 (1990).
21. M. A. Py, Z. M. Shi, Y. Haddab, H.-J. Bühlmann, M. V. Baeta Moreira, and M. Ilegems, in Noise in Physical Systems and 1/f Fluctuations, Proceedings of the International Conference, Kyoto, Japan, 1991, edited by T. Musha, S. Sato, and M. Yamamoto (unpublished), p. 285.
22. S. Y. Chou and D. A. Antoniadis, IEEE Trans. Electron Devices ED-34, 448 (1987).
23. E. P. Vandamme, L. K. J. Vandamme, C. Claes, E. Simoen, and R. J. Schreutelkamps, Solid-State Electron. 38, 1893 (1995).
24. Z. M. Shi, Ph.D. thesis No. 1043, Swiss Federal Institute of Technology, Lausanne, 1992.
25. D. J. Chadi and K. J. Chang, Phys. Rev. Lett. 61, 873 (1988).
26. D. J. Chadi and K. J. Chang, Phys. Rev. B 39, 10063 (1989).
27. E. Buks, M. Heiblum, Y. Levinson, and H. Shtrikman, Semicond. Sci. Technol. 9, 2031 (1994).
28. T. Ando, A. B. Fowler, and F. Stern, Rev. Mod. Phys. 54, 437 (1982).
29. G. S. Kousik, C. M. Van Vliet, G. Bosman, and P. H. Handel, Adv. Phys. 34, 663 (1985).
30. M. Tacano and Y. Sugiyama, Solid-State Electron. 34, 1049 (1991).
31. F. Hofman, R. J. J. Zijlstra, and J. M. Bettencourt de Freitas, J. Appl. Phys. 67, 2482 (1990).
32. P, J. Price, J. Vac. Sci. Technol. 19, 599 (1981); Surface Sci. 113, 199 (1982).
33. P, J. Price, J. Vac. Sci. Technol. 19, 599 (1981); Surface Sci. 113, 199 (1982).
34. F. Stern and S. Das Sarma, Phys. Rev. B 30, 840 (1984).