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Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 14, Issue 3, 1996, Pages 1773-1779

Influence of CH4/H2 reactive ion etching on the deep levels of Si-doped AlxGa1-xAS (x=0.25)

(4) Pereira, R G a Van Hove, M b De Potter, M b Van Rossum, M b

a UNIVERSITY OF CAMPINAS (Brazil)

b IMEC (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000414227 PISSN: 10711023 EISSN: None Source Type: Journal
DOI: 10.1116/1.588555 Document Type: Article

Times cited : (7)

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