1/f Noise in MODFET’s at Low Drain Bias

IEEE Transactions on Electron Devices

Volumn 37, Issue 10, 1990, Pages 2250-2253

  Peransin, Jean Marie ^a   Vignaud, Pierre ^a   Rigaud, Dominique ^a   Vandamme, Lode K J ^b  

^a UNIV MONTPELLIER   (France)

^b EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC PROPERTIES;

2-D ELECTRON GAS; LOW DRAIN VOLTAGES; MODFET;

TRANSISTORS, FIELD EFFECT;

EID: 0025508097     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.59916     Document Type: Article

References (10)

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2. L. K. J. Vandamme and H. M. M. de Werd, “1 1/f noise model for MOSTs biased in nonohmic region,” Solid-State Electron., vol. 23, p. 325, 1980.
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7. L. K. J. Vandamme and S. Oosterhoff, “Annealing of ion-implanted resistors reduces the 1/f noise,” J. Appl. Phys., vol. 59, pp. 3169–3174, 1986.
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