Low-frequency noise of selectively dry-etchgate-recessed GaAs MESFETs

Electronics Letters

Volumn 31, Issue 4, 1995, Pages 324-326

  Thayne, I G ^a   Elgaid, K ^a   Taylor, M R S ^a   Holland, M C ^a   Fairbaim, S ^a   Cameron, N I ^a   Beaumont, S P ^a   Belle, G ^b  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

^b UNIVERSITY OF ULM   (Germany)

Author keywords

MESFETs; Reactive ion etching; Semiconductor device noise

Indexed keywords

ETCHING; GATES (TRANSISTOR); NETWORK COMPONENTS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SPURIOUS SIGNAL NOISE;

DRY ETCHING; REACTIVE ION ETCHING; SEMICONDUCTOR DEVICE NOISE;

MESFET DEVICES;

EID: 0029256081     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19950206     Document Type: Article

References (5)

1. CAMERON, N.I., HOPKINS, G., THAYNE, I.O., BEAUMONT, S.P., WILKINSON, C.D.W., HOLLAND, M.C., KEAN, A.H., and STANLEY, C.R.: ‘Selective reactive ion etching of GaAs/AlGaAs metal-semiconductor field effect transistors’, J. Vac. Sci.Technol. B, 1991, 9, pp. 3538-541
2. CAMERON, N.I., FERGUSON, S., TAYLOR, M.R.S., BEAUMONT, S.P., HOLLAND, M., TRONCHE, C., SOULARD, M., and LADBROOKE. P.H.: ‘Selectively dry gate recessed GaAs metal-semiconductor fleld-effect transistors, high-electron-mobility transistors, and monolithic microwave integrated-circuits’, J. Vac. Sci. Technol. B, 1993, 11, (6), pp. 2244-2248
3. ROBINS, W.P.: ‘Phase noise in signal sources’ (Peter Peregrinus Ltd., 1982)
4. CHAO, P.C., SMITH. P.M., PALMATEER, S.C., and HWANG, J.C.M.: ‘Electron beam fabrication of GaAs low noise MESFETs using a new trilayer resist technique’, IEEE Trans., 1985, ED-32, (6), pp. 1042-1046
5. THAYNE, LG., PAULSEN, A., and BEAUMONT, S.P.: ‘A study of gate recess etching of In0.1GaAs/GaAs pseudomorphic HEMTs’, Semlcond. Sci. Technol., 1994, 9, (5), pp. 1143-1147