Passivation of deep level defects in molecular beam epitaxial GaAs by hydrogen plasma exposure

Applied Physics Letters

Volumn 49, Issue 17, 1986, Pages 1098-1100

  Dautremont Smith, W C ^a   Nabity, J C ^a   Swaminathan, V ^a   Stavola, Michael ^a   Chevallier, J ^a   Tu, C W ^a   Pearton, S J ^a  

^a LUCENT TECHNOLOGIES   (United States)

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EID: 0040514504     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.97433     Document Type: Article

References (20)