Coherence Between Gate- and Drain-Current Fluctuations in MESFET’s and MODFET’s Biased in the Ohmic Region

IEEE Transactions on Electron Devices

Volumn 39, Issue 10, 1992, Pages 2377-2382

  Rigaud, Dominique ^b   Peransin, Jean Marie ^b  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b UNIV MONTPELLIER   (France)

Author keywords

[No Author keywords available]

Indexed keywords

RELIABILITY; SPECTRUM ANALYSIS; SPURIOUS SIGNAL NOISE;

DRAIN CURRENT; GATE CURRENT; GENERATION-RECOMBINATION NOISE; MODFET DEVICES; NOISE SPECTRA;

MESFET DEVICES;

EID: 0026939773     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.158812     Document Type: Article

References (6)

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2. P. Vignaud, “Metrologie et etude du bruit de fond des transistors a effet de champ AsGa MESFET et MODFET; Bruits de la grille, du canal et correlation,” Ph.D. dissertation, University Montpellier II, Sciences et Techniques du Languedoc, Montpellier, France, May 20, 1990.
3. J.-M. Peransin, P. Vignaud, D. Rigaud, and L. K. J. Vandamme, “1/f noise in MODFET’s at low drain bias,” IEEE Trans. Electron Devices, vol. 37, pp. 2250–2253, Oct. 1990.
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5. L. K. J. Vandamme and H. M. M. de Werd, “1/f noise model for MOST’s biased in non ohmic region,” Solid-State Electron., vol. 23, pp. 325–329, 1980.
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