Deep levels and a possible d-x-like center in molecular beam epitaxial inxal1-xas

Journal of Electronic Materials

Volumn 16, Issue 4, 1987, Pages 271-274

  Hong, W P ^a   Dhar, S ^a   Bhattacharya, P K ^a   Chin, A ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

Author keywords

D X center; Molecular Beam Epitaxy; Ternary alloys

Indexed keywords

MOLECULAR BEAM EPITAXY; PHOTOCONDUCTIVITY - MEASUREMENTS;

D-X CENTER; ELECTRON TRAPS; INDIUM ALUMINUM ARSENIDE;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0023385066     PISSN: 03615235     EISSN: 1543186X     Source Type: Journal    
DOI: 10.1007/BF02653365     Document Type: Article

References (10)

1. A Simple Calculation of the DX Center Concentration Based on an L-Donor Model
2. Proc. 7th Intl. Symp. on GaAs and Related Compounds, St. Louis, 1978