Elimination of Mesa-Sidewall Gate Leakage in InAlAs/InGaAs Heterostructures by Selective Sidewall Recessing

IEEE Electron Device Letters

Volumn 13, Issue 4, 1992, Pages 195-197

  Bahl, Sandeep R ^a   del Alamo, Jesús A ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC MEASUREMENTS; MICROSCOPIC EXAMINATION--SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING ALUMINUM COMPOUNDS--APPLICATIONS; SEMICONDUCTING INDIUM COMPOUNDS--APPLICATIONS; SEMICONDUCTOR DIODES--FABRICATION;

HETEROSTRUCTURE DIODES; MESA-SIDEWALL GATE LEAKAGE; SELECTIVE SIDEWALL RECESSING; SUCCINIC-ACID-BASED SELECTIVE ETCHANT;

TRANSISTORS, FIELD EFFECT;

EID: 0026852510     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.145018     Document Type: Article

References (2)

1. P. M. Smith et al., ,Microwave InAlAs/InGaAs/InP HEMTs: Status and applications,- in Proc. 2nd Int. Conf. InP and Related Mater. (Denver, CO), 1990, p. 39.
2. H. H. Wieder, ,Fermi level and surface barrier of Ga x In 1-x As alloys,- Appl. Phys. Lett., vol. 38, p. 170, 1981.