A Comprehensive Optimization of InAlAs Molecular Beam Epitaxy for InGaAs/InAlAs HEMT Technology

Journal of the Electrochemical Society

Volumn 140, Issue 5, 1993, Pages 1503-1509

  Ababou, S ^d   Tabata, A ^d   Guillot, G ^d   Konstantinidis, G ^a  

^a INSTITUTE OF ELECTRONIC STRUCTURE AND LASER   (Greece)

^b UNIVERSITY OF MARYLAND   (United States)

^c UNIVERSITY OF BARCELONA   (Spain)

^d UNIVERSITÉ DE LYON   (France)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION; DEFECTS; ELECTRIC PROPERTIES; HIGH ELECTRON MOBILITY TRANSISTORS; MECHANICAL PROPERTIES; OPTICAL PROPERTIES; OPTIMIZATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SUBSTRATES; THERMAL EFFECTS;

INDIUM ALUMINUM ARSENIDE; INDIUM GALLIUM ARSENIDE; SUBSTRATE TEMPERATURE;

MOLECULAR BEAM EPITAXY;

EID: 0027592033     PISSN: 00134651     EISSN: 19457111     Source Type: Journal    
DOI: 10.1149/1.2221587     Document Type: Article

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