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Volumn 68, Issue 2, 1990, Pages 785-792

Damage to InP and InGaAsP surfaces resulting from CH4/H 2 reactive ion etching

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0039081753     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.346758     Document Type: Article
Times cited : (62)

References (27)
  • 16
    • 84950878752 scopus 로고    scopus 로고
    • It is unclear why the ratio for wet‐etched surfaces is not closer to one; however, we focus on the change in the ratio upon RIE.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.