Lasing mechanism of InGaN-GaN-AlGaN MQW laser diode grown on SiC by low-pressure metal-organic vapor phase epitaxy

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 4, Issue 3, 1998, Pages 490-497

  Domen, K ^a   Kuramata, A ^a   Soejima, R ^a   Horino, K ^a   Kubota, S ^a   Tanahashi, T ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

Bandgap inhomogeneity; Carrier recombination; Carrier recombination mechanizm; Composition fluctuation; Free carrier; Free carrier recombination; Optical variables measurement; Photoluminescence; Semiconductor lasers; Spatial inhomogeneity

Indexed keywords

CHARGE CARRIERS; ENERGY GAP; LIGHT MODULATION; METALLORGANIC VAPOR PHASE EPITAXY; OPTICAL PUMPING; OPTICAL VARIABLES MEASUREMENT; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SILICON CARBIDE;

COMPOSITION FLUCTUATION;

QUANTUM WELL LASERS;

EID: 0032067049     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.704106     Document Type: Article

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