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Applied Physics Letters

Volumn 70, Issue 25, 1997, Pages 3431-3433

Characterization of InGaN multiquantum well structures for blue semiconductor laser diodes

(5) Nishio, Johji a Sugiura, Lisa a Fujimoto, Hidetoshi a Kokubun, Yoshihiro a Itaya, Kazuhiko a

a TOSHIBA CORPORATION (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL STRUCTURE; HIGH TEMPERATURE EFFECTS; INTERFACES (MATERIALS); SAPPHIRE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SEMICONDUCTOR LASERS; SEMICONDUCTOR SUPERLATTICES; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; X RAY CRYSTALLOGRAPHY;

CLADDING LAYERS; CONTACT LAYERS; CRYSTALLINITY; OPTICAL GUIDING LAYERS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0031163951 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.119193 Document Type: Article

Times cited : (25)

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