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Volumn 35, Issue 1 A, 1996, Pages 124-131

Model for lasing oscillation due to bi-excitons and localized bi-excitons in wide-gap semiconductor quantum wells

Author keywords

Bi exciton; Blue laser; Bound exciton; Exciton; Localized bi exciton; Quantum dot; Quantum well; Stimulated emission

Indexed keywords

BINDING ENERGY; ELECTRON TRANSITIONS; ENERGY GAP; LASERS; LOW TEMPERATURE PHENOMENA; OSCILLATIONS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS; THERMODYNAMIC STABILITY;

EID: 0029733378     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.35.124     Document Type: Article
Times cited : (31)

References (47)
  • 18
  • 38
    • 3643119103 scopus 로고
    • 22) In quantum wells where intrinsic fast decay of free excitons is possible due to the lack of symmetry, it is theoretically predicted that the bi-exciton lifetime is longer than that of free excitons. D. S. Citrin: Phys. Rev. B 50 (1994) 15099.
    • (1994) Phys. Rev. B , vol.50 , pp. 15099
    • Citrin, D.S.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.