Characteristics of indium-gallium-nitride multiple-quantum-well blue laser diodes grown by MOCVD

MRS Internet Journal of Nitride Semiconductor Research

Volumn 2, Issue , 1997, Pages

  Mack, M P ^a,b   Abare, A ^a   Aizcorbe, M ^a   Kozodoy, Peter ^a   Keller, S ^a   Mishra, U K ^a   Coldren, L ^a   DenBaars, Steven ^a  

^a University of California at Santa Barbara   (United States)

^b Wright Laboratories (WL/AADD)   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; LIGHT POLARIZATION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; REACTIVE ION ETCHING; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM WELLS;

FAR FIELD PATTERN; MULTI-QUANTUM WELL (MQW); SHARP TRANSITION; THRESHOLD CURRENTS;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 4043086293     PISSN: 10925783     EISSN: None     Source Type: Journal    
DOI: 10.1557/s1092578300001678     Document Type: Article

References (6)

1. Shuji Nakamura, Gerhard Fasol, The Blue Laser Diode - GaN based Light Emitters and Lasers (Springer-Verlag, Heidelberg, 1997).
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4. K. Domen et. al., unpublished. Oral presentation at IEEE/LEOS Summer Topicals, Montreal, Canada, Aug. 1997.
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6. S. Nakamura et al., unpublished. Oral presentation at 24th ISCS, San Diego, CA, Sept. 9, 1997.