InGaN laser diodes grown on SiC substrate using low-pressure metal-organic vapor phase epitaxy

Materials Research Society Symposium - Proceedings

Volumn 482, Issue , 1997, Pages 1185-1196

  Kuramata, A ^a   Doreen, K ^a   Soejima, R ^a   Horino, K ^a   Kubota, S ^a   Tanahashi, T ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONTACTS; MAGNESIUM; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES;

BUFFER LAYERS; MULTIPLE QUANTUM WELLS (MQW);

SEMICONDUCTOR LASERS;

EID: 0031386816     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-482-1185     Document Type: Conference Paper

References (22)