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Volumn 482, Issue , 1997, Pages 1185-1196

InGaN laser diodes grown on SiC substrate using low-pressure metal-organic vapor phase epitaxy

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONTACTS; MAGNESIUM; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES;

EID: 0031386816     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-482-1185     Document Type: Conference Paper
Times cited : (6)

References (22)
  • Reference 정보가 존재하지 않습니다.

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.