Growth of InGaN films by MBE at the growth temperature of GaN

Materials Research Society Symposium - Proceedings

Volumn 395, Issue , 1996, Pages 163-168

  Singh, R ^a   Moustakas, T D ^a  

^a BOSTON UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HETEROJUNCTIONS; INDIUM ALLOYS; MOLECULAR BEAM EPITAXY; NITRIDES; PHASE SEPARATION; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR SUPERLATTICES; TEMPERATURE; THIN FILMS;

GALLIUM NITRIDE; GROWTH TEMPERATURE; INDIUM GALLIUM NITRIDE; SPINODAL DECOMPOSITION;

FILM GROWTH;

EID: 0029746818     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)