Subband emissions of InGaN multi-quantum-well laser diodes under room-temperature continuous wave operation

Applied Physics Letters

Volumn 70, Issue 20, 1997, Pages 2753-2755

  Nakamura, Shuji ^a   Senoh, Masayuki ^a   Nagahama, Shin Ichi ^a   Iwasa, Naruhito ^a   Yamada, Takao ^a   Matsushita, Toshio ^a   Sugimoto, Yasunobu ^a   Kiyoku, Hiroyuki ^a  

^a NICHIA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CONTINUOUS WAVE LASERS; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON ENERGY LEVELS; ELECTRON TRANSITIONS; EMISSION SPECTROSCOPY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS; TRANSMISSION ELECTRON MICROSCOPY;

INDIUM GALLIUM NITRIDE; LASER WAVELENGTH; LIGHT OUTPUT POWER CHARACTERISTICS; STOKES SHIFT; SUBBAND EMISSIONS;

QUANTUM WELL LASERS;

EID: 0031144315     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.118973     Document Type: Article

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