Optical transitions in GaN/AlxGa1-xN multiple quantum wells grown by molecular beam epitaxy

Applied Physics Letters

Volumn 69, Issue 17, 1996, Pages 2453-2455

  Smith, M ^a   Lin, J Y ^a   Jiang, H X ^a   Salvador, A ^b   Botchkarev, A ^b   Kim, W ^b   Morkoc, H ^b  

^a KANSAS STATE UNIVERSITY   (United States)

^b UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON EMISSION; ELECTRON TRANSITIONS; EXCITONS; MOLECULAR BEAM EPITAXY; PHONONS; PHOTOLUMINESCENCE; PHOTOMULTIPLIERS; SEMICONDUCTING GALLIUM COMPOUNDS; THERMAL EFFECTS;

ALUMINUM GALLIUM NITRIDE; CARRIER RECOMBINATION LIFETIMES; GALLIUM NITRIDE; OPTICAL TRANSITIONS; QUANTUM CONFINEMENT;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0030261533     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.117495     Document Type: Article

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