MBE growth of III-V nitride films and quantum-well structures using multiple rf plasma sources

Materials Research Society Symposium - Proceedings

Volumn 449, Issue , 1997, Pages 271-276

  Johnson, M A L ^a   Yu, Z ^a   Boney, C ^a   Rowland, W H ^a   Hughes, W C ^a   Cook, J W ^a   Schetzina, J F ^a   El Masry, N A ^a   Leonard, M T ^a   Kong, H S ^a   Edmond, J A ^a  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROLUMINESCENCE; METALLORGANIC VAPOR PHASE EPITAXY; MICROSCOPIC EXAMINATION; MOLECULAR BEAM EPITAXY; NITRIDES; PHOTOLUMINESCENCE; PLASMA APPLICATIONS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH;

GALLIUM NITRIDE; PLASMA ASSISTED MOLECULAR BEAM EPITAXY;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0030676650     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (13)